2SA1662 features complementary to ktc4374 maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage -80 v v ceo collector-emitter voltage -80 v v ebo emitter-base voltage -5 v i c collector current -continuous -0.4 a p c collector power dissipation 0.5 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-1ma,i e =0 -80 v collector-emitter breakdown voltage v (br)ceo i c =-10ma,i b =0 -80 v emitter-base breakdown voltage v (br)ebo i e =-1ma,i c =0 -5 v collector cut-off current i cbo v cb =-80v,i e =0 -0.1 a emitter cut-off current i ebo v eb =-5v,i c =0 -0.1 a h fe(1) v ce =-2v,i c =-50ma 70 240 dc current gain h fe(2) v ce =-2v,i c =-200ma 40 collector-emitter saturation voltage v ce(sat) i c =-200ma,i b =-20ma -0.4 v base-emitter voltage v be v ce =-2v,i c =-5ma -0.55 -0.8 v transition frequency f t v ce =-10v,i c =-10ma 120 mhz collector output capacitance c ob v cb =-10v,i e =0,f=1mhz 14 pf classification of h fe(1) rank o y range 70-140 120-240 marking fo fy sot-89 1. base 2. collector 3. emitter 1 2 3 transistor (pnp) 1 date:2011/05 www.htsemi.com semiconductor jinyu
typical characteristics 2SA1662 2 date:2011/05 www.htsemi.com semiconductor jinyu
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